PHOTO-VOLTAIC EFFECT AND SCHOTTKY BARRIERS IN THE AU-IN1-XGAXSB SYSTEM

被引:5
作者
KEELER, WJ [1 ]
ROTH, AP [1 ]
FORTIN, E [1 ]
机构
[1] UNIV OTTAWA,DEPT PHYS,OTTAWA K1N 6N5,ONTARIO,CANADA
关键词
Compendex;
D O I
10.1139/p80-010
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
SEMICONDUCTOR DEVICES
引用
收藏
页码:63 / 67
页数:5
相关论文
共 21 条
  • [1] PIEZOREFLECTANCE MEASUREMENTS ON GAXIN1-XSB ALLOYS
    AUVERGNE, D
    CAMASSEL, J
    MATHIEU, H
    JOULLIE, A
    [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1974, 35 (02) : 133 - 140
  • [2] CONDUCTION BANDS OF GAXIN1-XSB ALLOYS
    CODERRE, WM
    WOOLLEY, JC
    [J]. CANADIAN JOURNAL OF PHYSICS, 1969, 47 (22) : 2553 - &
  • [3] CODERRE WM, 1968, CAN J PHYS, V46, P1669
  • [4] NORMALIZED THERMIONIC-FIELD (T-F) EMISSION IN METAL-SEMICONDUCTOR (SCHOTTKY) BARRIERS
    CROWELL, CR
    RIDEOUT, VL
    [J]. SOLID-STATE ELECTRONICS, 1969, 12 (02) : 89 - &
  • [5] EASTMAN DE, 1975, PHYS REV LETT, V34, P1024
  • [6] ROOM-TEMPERATURE INTERFACIAL REACTION IN AU-SEMICONDUCTOR SYSTEMS
    HIRAKI, A
    SHUTO, K
    KIM, S
    KAMMURA, W
    IWAMI, M
    [J]. APPLIED PHYSICS LETTERS, 1977, 31 (09) : 611 - 612
  • [7] PREPARATION AND ELECTRICAL PROPERTIES OF HOMOGENEOUS GAXIN1-XSB ALLOYS
    JOULLIE, A
    BOUGNOT, G
    ALLEGRE, J
    [J]. MATERIALS RESEARCH BULLETIN, 1972, 7 (10) : 1101 - &
  • [8] KORWINPAWLOWSKI ML, 1974, METAL SEMICONDUCTOR, P255
  • [9] ELECTRICAL TRANSPORT AND BAND-STRUCTURE OF GAAS
    LEE, HJ
    BASINSKI, J
    JURAVEL, LY
    WOOLLEY, JC
    [J]. CANADIAN JOURNAL OF PHYSICS, 1979, 57 (02) : 233 - 242
  • [10] NEW PHENOMENA IN SCHOTTKY-BARRIER FORMATION ON III-V-COMPOUNDS
    LINDAU, I
    CHYE, PW
    GARNER, CM
    PIANETTA, P
    SU, CY
    SPICER, WE
    [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1978, 15 (04): : 1332 - 1339