DOPING CONCENTRATION-DEPENDENCE OF RADIANCE AND OPTICAL MODULATION BANDWIDTH IN CARBON-DOPED GA0.51IN0.49P/GAAS LIGHT-EMITTING-DIODES GROWN BY GAS SOURCE MOLECULAR-BEAM EPITAXY

被引：15

作者：

DELYON, TJ ^{[1
]}

WOODALL, JM ^{[1
]}

MCINTURFF, DT ^{[1
]}

BATES, RJS ^{[1
]}

KASH, JA ^{[1
]}

KIRCHNER, PD ^{[1
]}

CARDONE, F ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,DIV RES,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 03期

关键词：

D O I：

10.1063/1.106654

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Double-heterostructure light-emitting diodes (LEDs) consisting of an n-Ga0.51In0.49P emitter, a carbon-doped p-GaAs active layer, and a p-Al0.30Ga0.70As cladding layer have been grown by gas source molecular beam epitaxy with halomethane carbon doping sources. CCl4 and CHCl3 have been used to vary the active layer C doping level from 10(18) to 10(20) cm-3. Measurements of LED optical modulation bandwidth indicate that the bandwidth increases with C doping, attaining a record value of 1.6 GHz at 10(20) cm-3 C concentration. The LED radiance is observed to decline significantly in the 10(19) - 10(20) cm-3 range.

引用

页码：353 / 355

页数：3

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