A NEW ESR SIGNAL OF INTRINSIC DEFECTS IN ELECTRON-IRRADIATED P-TYPE GAAS

被引：4

作者：

JIA, YQ

VONBARDELEBEN, HJ

机构：

[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA

[2] CNRS,PHYS SOLIDES GRP,F-75251 PARIS 05,FRANCE

来源：

PHYSICS LETTERS A | 1993年 / 178卷 / 1-2期

关键词：

D O I：

10.1016/0375-9601(93)90752-L

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

Electron spin resonance studies of p-type ([Zn] = 7 X 10(17) cm-3) GaAs irradiated by 1.5 MeV electrons reveal a new signal at g = 1.99. The ratio of spin concentration to electron dose is determined as 3 cm-1, the highest among those reported in electron-irradiated GaAs. We attribute this signal to intrinsic defects and discuss defect models in the light of recent theoretical results.

引用

页码：205 / 208

页数：4

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