ELECTRONIC-STRUCTURE AND ELECTRON-PARAMAGNETIC-RESONANCE PROPERTIES OF INTRINSIC DEFECTS IN GAAS

被引：25

作者：

DELERUE, C

机构：

[1] Laboratoire de Physique des Solides, Institut Supérieur d'Electronique du Nord, 59046 Lille Cedex

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the electron-paramagnetic-resonance properties of the defect. The interpretations of existing experimental spectra are reexamined.

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页码：10525 / 10535

页数：11

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