ELECTRONIC-STRUCTURE AND ELECTRON-PARAMAGNETIC-RESONANCE PROPERTIES OF INTRINSIC DEFECTS IN GAAS

被引：25

作者：

DELERUE, C

机构：

[1] Laboratoire de Physique des Solides, Institut Supérieur d'Electronique du Nord, 59046 Lille Cedex

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10525

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The electronic structure of vacancies, antisites, self-interstitials, and some related complex defects in GaAs is calculated using a self-consistent semiempirical tight-binding technique. In particular, we give the electron densities on the various atoms to predict the electron-paramagnetic-resonance properties of the defect. The interpretations of existing experimental spectra are reexamined.

引用

收藏

页码：10525 / 10535

页数：11

相关论文

共 50 条

[11] METASTABILITY OF THE ISOLATED ARSENIC-ANTISITE DEFECT IN GAAS [J].

CHADI, DJ ;

CHANG, KJ .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2187-2190

[12]

CHEUNG JL, 1979, J APPL PHYS, V50, P2962

[13] EPR EVIDENCE FOR AS INTERSTITIAL-RELATED DEFECTS IN SEMI-INSULATING GAAS [J].

CHRISTOFFEL, E ;

BENCHIGUER, T ;

GOLTZENE, A ;

SCHWAB, C ;

WANG, GY ;

WU, J .

PHYSICAL REVIEW B, 1990, 42 (06) :3461-3468

[14] POSITRON-ANNIHILATION SPECTROSCOPY OF NATIVE VACANCIES IN AS-GROWN GAAS [J].

CORBEL, C ;

STUCKY, M ;

HAUTOJARVI, P ;

SAARINEN, K ;

MOSER, P .

PHYSICAL REVIEW B, 1988, 38 (12) :8192-8208

[15] THEORETICAL EVIDENCE FOR AN OPTICALLY INDUCIBLE STRUCTURAL TRANSITION OF THE ISOLATED AS ANTISITE IN GAAS - IDENTIFICATION AND EXPLANATION OF EL2 [J].

DABROWSKI, J ;

SCHEFFLER, M .

PHYSICAL REVIEW LETTERS, 1988, 60 (21) :2183-2186

[16] VACANCY INTERACTIONS IN GAAS [J].

DANNEFAER, S ;

KERR, D .

JOURNAL OF APPLIED PHYSICS, 1986, 60 (02) :591-594

[17] NEW THEORETICAL APPROACH OF TRANSITION-METAL IMPURITIES IN SEMICONDUCTORS [J].

DELERUE, C ;

LANNOO, M ;

ALLAN, G .

PHYSICAL REVIEW B, 1989, 39 (03) :1669-1681

[18] METASTABLE STATE OF EL2 IN GAAS [J].

DELERUE, C ;

LANNOO, M ;

STIEVENARD, D ;

VONBARDELEBEN, HJ ;

BOURGOIN, JC .

PHYSICAL REVIEW LETTERS, 1987, 59 (25) :2875-2878

[19] NEW TIGHT-BINDING PARAMETERS FOR COVALENT SOLIDS OBTAINED USING LOUIE PERIPHERAL STATES [J].

HARRISON, WA .

PHYSICAL REVIEW B, 1981, 24 (10) :5835-5843

[20] EL2 AND ANION ANTISITE DEFECTS IN PLASTICALLY DEFORMED GAAS [J].

HOFMANN, DM ;

MEYER, BK ;

SPAETH, JM ;

WATTENBACH, M ;

KRUGER, J ;

KISIELOWSKIKEMMERICH, C ;

ALEXANDER, H .

JOURNAL OF APPLIED PHYSICS, 1990, 68 (07) :3381-3385

← 1 2 3 4 5 →