ELECTRON-PARAMAGNETIC-RESONANCE OBSERVATION OF GALLIUM VACANCY IN ELECTRON-IRRADIATED P-TYPE GAAS

被引：36

作者：

JIA, YQ ^{[1
]}

VONBARDELEBEN, HJ ^{[1
]}

STIEVENARD, D ^{[1
]}

DELERUE, C ^{[1
]}

机构：

[1] INST SUPER ELECTR N,LAB PHYS SOLIDES,F-59046 LILLE,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 45卷 / 04期

关键词：

D O I：

10.1103/PhysRevB.45.1645

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report an observation by electron paramagnetic resonance (EPR) of the gallium vacancy defect in GaAs. The defect is observed after electron irradiation of p-type GaAs. The gallium vacancy defect shows trigonal symmetry; its spin-Hamiltonian parameters are determined as S = 1/2, g parallel-to [111] - 1.98 +/- 0.02, g parallel-to [111] = 2.08 +/- 0.01, A parallel-to [111] = (280 +/- 20) x 10(-4) cm-1, and A perpendicular-to [111] = (130 +/- 10) x 10(-4) cm-1. A tight-binding Green's function calculation confirms the defect model and identifies its charge state as 2-. The gallium vacancy is unstable at room temperature, the thermal annealing parameters being Fermi-level dependent.

引用

页码：1645 / 1649

页数：5

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