TIME-DEPENDENT BREAKDOWN OF SILICON DIOXIDE FILMS

被引：48

作者：

RAIDER, SI ^{[1
]}

机构：

[1] IBM CORP, E FISHKILL FAC, SYST PROD, HOPEWELL JCT, NY 12533 USA

来源：

APPLIED PHYSICS LETTERS | 1973年 / 23卷 / 01期

关键词：

D O I：

10.1063/1.1654726

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：34 / 36

页数：3

共 11 条

[1]

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GAFNI, H .

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[3] FOWLER-NORDHEIM TUNNELING INTO THERMALLY GROWN SIO2 [J].

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SNOW, EH .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (01) :278-+

[4] ION NEUTRALIZATION PROCESSES AT INSULATOR SURFACES AND CONSEQUENT IMPURITY MIGRATION EFFECTS IN SIO2 FILMS [J].

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KUSHNER, RA ;

MURPHY, VT .

PHYSICAL REVIEW LETTERS, 1973, 30 (13) :614-617

[5] ELECTRICAL-CONDUCTION AND DIELECTRIC BREAKDOWN IN SILICON DIOXIDE FILMS ON SILICON [J].

OSBURN, CM ;

WEITZMAN, EJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1972, 119 (05) :603-+

[6]

OSBURN CM, UNPUBLISHED

[7]

PLISKIN WA, 1967, PHYSICS THIN FILMS, V4

[8]

RAIDER SI, UNPUBLISHED

[9] ENHANCED TUNNELING THROUGH DIELECTRIC FILMS DUE TO IONIC DEFECTS [J].

SCHMIDLIN, FW .

JOURNAL OF APPLIED PHYSICS, 1966, 37 (07) :2823-+

[10] ION TRANSPORT PHENOMENA IN INSULATING FILMS [J].

SNOW, EH ;

GROVE, AS ;

DEAL, BE ;

SAH, CT .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (05) :1664-&

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