INFRARED OBSERVATION OF BREAKDOWN BEHAVIOR OF HIGH-VOLTAGE P-N-JUNCTIONS AND P-N-P STRUCTURES IN SILICON

被引：9

作者：

VOSS, P ^{[1
]}

机构：

[1] SIEMENS AG,MUNICH,WEST GERMANY

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1973年 / ED20卷 / 03期

关键词：

D O I：

10.1109/T-ED.1973.17643

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 303

页数：5

共 10 条

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[2] AVALANCHE EFFECTS IN SILICON P-N JUNCTIONS .2. STRUCTURALLY PERFECT JUNCTIONS [J].

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SCARLETT, RM ;

HAITZ, RH ;

MCDONALD, B .

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[3] A NEW STRIATION ETCH FOR SILICON [J].

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[4]

KOKOSA HA, 1967, P IEEE, V55, P1389

[5]

KRAUSSE J, 1970, OCT DFG COLL BURGH G

[6] RESISTIVITY INHOMOGENEITIES IN SILICON CRYSTALS [J].

MAZUR, RG .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (03) :255-&

[7] ON PHYSICS OF AVALANCHE BREAKDOWN IN SEMICONDUCTORS [J].

MONCH, W .

PHYSICA STATUS SOLIDI, 1969, 36 (01) :9-+

[8]

MUHLBAUER A, 1965, Z NATURFORSCH PT A, VA 20, P1089

[9]

SZE SM, 1969, PHYSICS SEMICONDUCTO, P111

[10]

VOSS P, 1971, P VDE M DYNAMISCHE P, P251

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