GAP-STATE DENSITY IN P-TYPE A-SI-H DEDUCED FROM SUBGAP OPTICAL-ABSORPTION MEASUREMENTS

被引：4

作者：

KUNTZ, R

DZIESIATY, J

机构：

[1] Fachbereich Physik, Humboldt-Universität Zu Berlin, Institut Für Optik Und Spektroskopie

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1991年 / 124卷 / 02期

关键词：

D O I：

10.1002/pssa.2211240241

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

[No abstract available]

引用

页码：K149 / K154

页数：6

共 10 条

[1]

ALBERT M, 1989, P NONCRYSTALLINE SEM, V3, P139

[2]

CURTINS H, 1988, AMORPHOUS SILICON RE, P329

[3]

FEDFIELD D, 1982, SOLID STATE COMMUN, V44, P1347

[4] INCREASE OF DOPING EFFICIENCY BY LIGHT SOAKING IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

JANG, J ;

PARK, SC ;

KIM, SC ;

LEE, C .

APPLIED PHYSICS LETTERS, 1987, 51 (22) :1804-1806

[5] A-SI-H GAP STATES INVESTIGATED BY CPM AND SCLC [J].

KOCKA, J ;

VANECEK, M ;

SCHAUER, F .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :715-722

[6]

Mott N. F., 1979, ELECTRONIC PROCESSES

[7] EVIDENCE FOR EXPONENTIAL BAND TAILS IN AMORPHOUS-SILICON HYDRIDE [J].

TIEDJE, T ;

CEBULKA, JM ;

MOREL, DL ;

ABELES, B .

PHYSICAL REVIEW LETTERS, 1981, 46 (21) :1425-1428

[8] PHOTOELECTRICAL AND OPTICAL STUDY OF P-TYPE A-SI-H USED AS A PHOTORECEPTOR [J].

TRISKA, A ;

SHIMIZU, I ;

KOCKA, J ;

TICHY, L ;

VANECEK, M .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :493-496

[9] GAP STATES DENSITY IN A-SI-H DEDUCED FROM SUBGAP OPTICAL-ABSORPTION MEASUREMENT ON SCHOTTKY SOLAR-CELLS [J].

VANECEK, M ;

ABRAHAM, A ;

STIKA, O ;

STUCHLIK, J ;

KOCKA, J .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1984, 83 (02) :617-623

[10] DENSITY OF THE GAP STATES IN UNDOPED AND DOPED GLOW-DISCHARGE A-SI-H [J].

VANECEK, M ;

KOCKA, J ;

STUCHLIK, J ;

KOZISEK, Z ;

STIKA, O ;

TRISKA, A .

SOLAR ENERGY MATERIALS, 1983, 8 (04) :411-423

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