INCREASE OF DOPING EFFICIENCY BY LIGHT SOAKING IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：26

作者：

JANG, J

PARK, SC

KIM, SC

LEE, C

机构：

[1] KYUNG HEE UNIV,BASIC SCI RES INST,DONGDAEMOON KU,SEOUL,SOUTH KOREA

[2] KOREA ADV INST SCI & TECHNOL,DEPT PHYS,SEOUL 131,SOUTH KOREA

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 22期

关键词：

D O I：

10.1063/1.98528

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1804 / 1806

页数：3

共 13 条

[1] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED MULTILAYERS AND COMPENSATED THIN-FILMS OF HYDROGENATED AMORPHOUS-SILICON [J].

AGARWAL, SC ;

GUHA, S .

PHYSICAL REVIEW B, 1985, 32 (12) :8469-8472

[2] HYDROGEN-ACCEPTOR PAIRS IN SILICON [J].

DELEO, GG ;

FOWLER, WB .

PHYSICAL REVIEW LETTERS, 1986, 56 (04) :402-402

[3] ANNEALING BEHAVIOR OF LIGHT-INDUCED DEFECTS IN BORON-DOPED HYDROGENATED AMORPHOUS-SILICON ALLOYS [J].

DENBOER, W ;

GUHA, S .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (12) :5539-5541

[4] TEMPERATURE-DEPENDENT LIGHT-INDUCED-CHANGES AND ANNEALING OF THE CHANGES IN HYDROGENATED AMORPHOUS-SILICON [J].

JANG, J ;

KIM, TM ;

HYUN, JK ;

YOON, JH ;

LEE, C .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) :429-432

[5] ANOMALOUS SUBSTRATE AND ANNEALING TEMPERATURE DEPENDENCIES OF HEAVILY BORON-DOPED HYDROGENATED AMORPHOUS-SILICON [J].

JANG, J ;

KIM, SC .

JOURNAL OF APPLIED PHYSICS, 1987, 61 (05) :2092-2095

[6] PERSISTENT PHOTOCONDUCTIVITY IN DOPING-MODULATED AMORPHOUS-SEMICONDUCTORS [J].

KAKALIOS, J ;

FRITZSCHE, H .

PHYSICAL REVIEW LETTERS, 1984, 53 (16) :1602-1605

[7] DOPING EFFECTS ON POST-HYDROGENATED CHEMICAL-VAPOR-DEPOSITED AMORPHOUS-SILICON [J].

MAGARINO, J ;

KAPLAN, D ;

FRIEDERICH, A ;

DENEUVILLE, A .

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 45 (03) :285-306

[8] NEUTRALIZATION OF SHALLOW ACCEPTOR LEVELS IN SILICON BY ATOMIC-HYDROGEN [J].

PANKOVE, JI ;

CARLSON, DE ;

BERKEYHEISER, JE ;

WANCE, RO .

PHYSICAL REVIEW LETTERS, 1983, 51 (24) :2224-2225

[9] HYDROGEN LOCALIZATION NEAR BORON IN SILICON [J].

PANKOVE, JI ;

ZANZUCCHI, PJ ;

MAGEE, CW ;

LUCOVSKY, G .

APPLIED PHYSICS LETTERS, 1985, 46 (04) :421-423

[10]

Park S. -A, UNPUB

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