BALLISTIC ELECTRON-EMISSION IN SILICIDE SILICON INTERFACES

被引：28

作者：

HASEGAWA, Y

KUK, Y

TUNG, RT

SILVERMAN, PJ

SAKURAI, T

机构：

[1] UNIV TOKYO,INST SOLID STATE PHYS,TOKYO 113,JAPAN

[2] TOHOKU UNIV,IMR,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1991年 / 9卷 / 02期

关键词：

D O I：

10.1116/1.585462

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ballistic electron emission microscopy (BEEM) of the NiSi2/Si(111) interface has been carried out under ultrahigh vacuum conditions. Atomically resolved scanning tunneling microscopy (STM) images of this surface show an unreconstructed (1 x 1) structure with Si adatoms that tend to form trimers. STM and BEEM-current images are taken simultaneously for type-A and -B interfaces. The BEEM currents measured for types A and B differ by less than 10% of the total BEEM current. The results may originate from field pinching between two domains.

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页码：578 / 580

页数：3

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