LATTICE DILATION BY FREE-ELECTRONS IN HEAVILY-DOPED GAAS-SI

被引：34

作者：

LESZCZYNSKI, M

BAKMISIUK, J

DOMAGALA, J

MUSZALSKI, J

KANIEWSKA, M

MARCZEWSKI, J

机构：

[1] POLISH ACAD SCI,INST PHYS,PL-00668 WARSAW,POLAND

[2] INST ELECTR MAT TECHNOL,PL-00668 WARSAW,POLAND

来源：

APPLIED PHYSICS LETTERS | 1995年 / 67卷 / 04期

关键词：

D O I：

10.1063/1.115181

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Lattice constants of GaAs layers grown by molecular beam epitaxy were examined by using the high resolution x-ray diffractometer. For highly doped samples (up to 9 X 10(18) cm(-3) of free-electron concentration) we observed an increase of the lattice constant with respect to the undoped layers. Since substitutional silicon atoms decrease the lattice constant of GaAs, the results are explained by the influence of free-electrons via the deformation potential of the Gamma minimum of the conduction band. The best fit to our diffractometric data was obtained for the band-gap deformation potential equal to -8.5 eV. (C) 1995 American Institute of Physics.

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页码：539 / 541

页数：3

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