DEFORMATION POTENTIAL IN A HIGH-ELECTRON-MOBILITY GAAS/GA0.7AL0.3AS HETEROSTRUCTURE - HYDROSTATIC-PRESSURE STUDIES

被引：9

作者：

GORCZYCA, I

SUSKI, T

LITWINSTASZEWSKA, E

DMOWSKI, L

KRUPSKI, J

ETIENNE, B

机构：

[1] UNIV WARSAW,INST THEORET PHYS,PL-00681 WARSAW,POLAND

[2] CNRS,MICROSTRUCT & MICROELECTR LAB,F-92220 BAGNEUX,FRANCE

来源：

PHYSICAL REVIEW B | 1992年 / 46卷 / 07期

关键词：

D O I：

10.1103/PhysRevB.46.4328

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We have studied scattering mechanisms and their pressure dependence in the high-electron-mobility heterostructure GaAs/Ga0.7Al0.3As. We concentrate on examination of two-dimensional-electron-gas scattering by acoustic phonons, which enables us to determine the magnitude of the deformation potential for GaAs in the considered heterostructure. The obtained value of E(D) = - 1 1.5 +/- 0.5 eV is in accordance with the most frequently reported data for GaAs/Ga1-xAlxAs heterostructures. Contrary to the common assumptions about the pressure independence of E(D), we have found that its absolute value decreases with the applied hydrostatic pressure. A short discussion of this behavior is presented also.

引用

页码：4328 / 4331

页数：4

共 24 条

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