STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

[21] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 255 - 260

[22] ELECTRON-SPIN-RESONANCE (ELECTRON-SPIN-RESONANCE AND LESR) STUDIES IN A-SI1-XGEX-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 731 - 734

[23] HYPERFINE INTERACTION IN PHOSPHORUS-DOPED AMORPHOUS-SILICON GERMANIUM ALLOYS [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (04) : 235 - 240

[24] DEFECT STATES IN A-SI1-XGEX-H STUDIED BY ELECTRON-SPIN RESONANCE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1015 - 1018

[25] FINGER F, IN PRESS AMORPHOUS S

[26] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[27] GALLEY DP, 1983, THESIS U DELAWARE

[28] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 722 - 724

[29] Giovannella C., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P713

[30] HYDROGEN MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3259 - 3267

[21] HYDROGEN CONTENT OF A-GE-H AND A-SI-H AS DETERMINED BY IR SPECTROSCOPY, GAS EVOLUTION AND NUCLEAR-REACTION TECHNIQUES [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1980, 35-6 (JAN-) : 255 - 260

[22] ELECTRON-SPIN-RESONANCE (ELECTRON-SPIN-RESONANCE AND LESR) STUDIES IN A-SI1-XGEX-H [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1985, 77-8 : 731 - 734

[23] HYPERFINE INTERACTION IN PHOSPHORUS-DOPED AMORPHOUS-SILICON GERMANIUM ALLOYS [J]. PHILOSOPHICAL MAGAZINE LETTERS, 1988, 57 (04) : 235 - 240

[24] DEFECT STATES IN A-SI1-XGEX-H STUDIED BY ELECTRON-SPIN RESONANCE [J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1015 - 1018

[25] FINGER F, IN PRESS AMORPHOUS S

[26] CHARACTERIZATION OF GLOW-DISCHARGE DEPOSITED A-SI-H [J]. SOLAR ENERGY MATERIALS, 1980, 3 (04): : 447 - 501

[27] GALLEY DP, 1983, THESIS U DELAWARE

[28] ASSESSMENT OF LATTICE-RELAXATION EFFECTS IN TRANSITIONS FROM MOBILITY GAP STATES IN HYDROGENATED AMORPHOUS-SILICON USING TRANSIENT PHOTOCAPACITANCE TECHNIQUES [J]. APPLIED PHYSICS LETTERS, 1986, 49 (12) : 722 - 724

[29] Giovannella C., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P713

[30] HYDROGEN MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J]. PHYSICAL REVIEW B, 1987, 36 (06): : 3259 - 3267