STRUCTURAL, OPTICAL, AND SPIN PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS

被引：126

作者：

STUTZMANN, M ^{[1
]}

STREET, RA ^{[1
]}

TSAI, CC ^{[1
]}

BOYCE, JB ^{[1
]}

READY, SE ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

JOURNAL OF APPLIED PHYSICS | 1989年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.343574

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：569 / 592

页数：24

共 110 条

[81] THERMAL-EQUILIBRIUM PROCESSES IN AMORPHOUS-SILICON
STREET, RA
KAKALIOS, J
TSAI, CC
HAYES, TM
[J]. PHYSICAL REVIEW B, 1987, 35 (03): : 1316 - 1333
[82] LUMINESCENCE AND RECOMBINATION IN HYDROGENATED AMORPHOUS-SILICON
STREET, RA
[J]. ADVANCES IN PHYSICS, 1981, 30 (05) : 593 - 676
[83] DOPANT AND DEFECT STATES IN A-SI-H
STREET, RA
BIEGELSEN, DK
JACKSON, WB
JOHNSON, NM
STUTZMANN, M
[J]. PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1985, 52 (03): : 235 - 245
[84] STREET RA, 1987, PHILOS MAG B, V56, P28
[85] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-GERMANIUM
STUTZMANN, M
STUKE, J
DERSCH, H
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1983, 115 (01): : 141 - 151
[86] ELECTRON-SPIN-RESONANCE STUDY OF BORON-DOPED AMORPHOUS SIXGE1-X - H-ALLOYS
STUTZMANN, M
NEMANICH, RJ
STUKE, J
[J]. PHYSICAL REVIEW B, 1984, 30 (07): : 3595 - 3602
[87] ELECTRONIC STATES IN THE GAP OF AMORPHOUS SILICON-GERMANIUM ALLOYS
STUTZMANN, M
TSAI, CC
STREET, RA
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 : 1011 - 1014
[88] PARAMAGNETIC STATES IN DOPED AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
STUKE, J
[J]. SOLID STATE COMMUNICATIONS, 1983, 47 (08) : 635 - 639
[89] DETAILED INVESTIGATION OF DOPING IN HYDROGENATED AMORPHOUS-SILICON AND GERMANIUM
STUTZMANN, M
BIEGELSEN, DK
STREET, RA
[J]. PHYSICAL REVIEW B, 1987, 35 (11): : 5666 - 5701
[90] OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON
STUTZMANN, M
JACKSON, WB
[J]. SOLID STATE COMMUNICATIONS, 1987, 62 (03) : 153 - 157

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