OCCUPANCY OF DANGLING BOND DEFECTS IN DOPED HYDROGENATED AMORPHOUS-SILICON

被引：33

作者：

STUTZMANN, M ^{[1
]}

JACKSON, WB ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

SOLID STATE COMMUNICATIONS | 1987年 / 62卷 / 03期

关键词：

CRYSTALS; -; Defects;

D O I：

10.1016/0038-1098(87)90181-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The occupancy of dangling bond defects in doped hydrogenated amorphous silicon is examined using a combination of electron spin resonance, sub-bandgap absorption, and transport measurements. A corrected value of U equals plus 0. 2 ev ( plus or minus 0. 1 ev) is obtained for the dangling bond correlation energy in state-of-the-art material. The importance of potential fluctuations caused by inhomogeneous defect distributions is demonstrated for the case of boron doping in non-optimized samples.

引用

页码：153 / 157

页数：5

共 8 条

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