THE DOPING EFFICIENCY IN AMORPHOUS-SILICON AND GERMANIUM

被引：33

作者：

STUTZMANN, M ^{[1
]}

机构：

[1] XEROX CORP,PALO ALTO RES CTR,PALO ALTO,CA 94304

来源：

PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES | 1986年 / 53卷 / 01期

关键词：

D O I：

10.1080/13642818608238962

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：L15 / L21

页数：7

共 15 条

[1] LOCAL BONDING ARRANGEMENTS OF BORON IN DOPED HYDROGENATED AMORPHOUS-SILICON
GREENBAUM, SG
CARLOS, WE
TAYLOR, PC
[J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (06) : 1874 - 1877
[2] DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY
JACKSON, WB
AMER, NM
[J]. PHYSICAL REVIEW B, 1982, 25 (08): : 5559 - 5562
[3] THEORY OF DEFECT FORMATION IN THE GLOW-DISCHARGE DEPOSITION OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON
KAMPAS, FJ
VANIER, PE
[J]. PHYSICAL REVIEW B, 1985, 31 (06): : 3654 - 3658
[4] COORDINATION OF ARSENIC IMPURITIES IN AMORPHOUS SILICON-HYDROGEN ALLOYS
KNIGHTS, JC
HAYES, TM
MIKKELSEN, JC
[J]. PHYSICAL REVIEW LETTERS, 1977, 39 (11) : 712 - 715
[5] THE INCORPORATION OF PHOSPHORUS IN AMORPHOUS-SILICON
LEIDICH, D
LINHART, E
NIEMANN, E
GRUENINGER, HW
FISCHER, R
ZEYFANG, RR
[J]. JOURNAL OF NON-CRYSTALLINE SOLIDS, 1983, 59-6 (DEC) : 613 - 616
[6] STRUCTURE OF AMORPHOUS (GE,SI)1-XYX ALLOYS
PHILLIPS, JC
[J]. PHYSICAL REVIEW LETTERS, 1979, 42 (17) : 1151 - 1154
[7] LOCAL BONDING CONFIGURATION OF PHOSPHORUS IN DOPED AND COMPENSATED AMORPHOUS HYDROGENATED SILICON
REIMER, JA
DUNCAN, TM
[J]. PHYSICAL REVIEW B, 1983, 27 (08): : 4895 - 4901
[8] SUBSTITUTIONAL DOPING OF AMORPHOUS SILICON
SPEAR, WE
LECOMBER, PG
[J]. SOLID STATE COMMUNICATIONS, 1975, 17 (09) : 1193 - 1196
[9] ELECTRONIC PROPERTIES OF SUBSTITUTED DOPED AMORPHOUS SI AND GE
SPEAR, WE
LECOMBER, PG
[J]. PHILOSOPHICAL MAGAZINE, 1976, 33 (06): : 935 - 949
[10] DOPING AND THE FERMI ENERGY IN AMORPHOUS-SILICON
STREET, RA
[J]. PHYSICAL REVIEW LETTERS, 1982, 49 (16) : 1187 - 1190

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