THEORY OF DEFECT FORMATION IN THE GLOW-DISCHARGE DEPOSITION OF PHOSPHORUS-DOPED HYDROGENATED AMORPHOUS-SILICON

被引：11

作者：

KAMPAS, FJ

VANIER, PE

机构：

来源：

PHYSICAL REVIEW B | 1985年 / 31卷 / 06期

关键词：

D O I：

10.1103/PhysRevB.31.3654

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：3654 / 3658

页数：5

共 24 条

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