STUDY OF HYDROGEN VACUUM-ULTRAVIOLET LIGHT-SOURCES FOR SUBMICRON LITHOGRAPHY

被引：15

作者：

KUDO, K ^{[1
]}

IWABUCHI, T ^{[1
]}

MUTOH, K ^{[1
]}

MIYATA, T ^{[1
]}

SANO, R ^{[1
]}

TANAKA, K ^{[1
]}

机构：

[1] MATSUSHITA RES INST TOKYO INC,TAMA KU,KAWASAKI,KANAGAWA 214,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1990年 / 29卷 / 11期

关键词：

SUBMICRON PHOTOLITHOGRAPHY; POLYMETHYL METHACRYLATE; TRILAYER RESIST SYSTEM; VUV LIGHT; RESIST SENSITIVITY; HYDROGEN DISCHARGE; MICROWAVE DISCHARGE;

D O I：

10.1143/JJAP.29.2572

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The output properties of hydrogen light sources and the resist parameters, such as spectral sensitivity and absorption coefficient, in the vacuum-ultraviolet (VUV) region were investigated. A very low exposure energy of about 1 mJ/cm2 was obtained by employing a very thin polymethyl methacrylate film and the VUV light of hydrogen microwave discharge. Contact photolithography using a Si/MgF2 mask and a trilayer resist system showed that submicron patterns as small as 0.2 mu-m had been replicated at an exposure time of under 30 s.

引用

页码：2572 / 2576

页数：5

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