LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION OF SILICON-CARBIDE THIN-FILMS FROM ORGANOPOLYSILANES

被引：5

作者：

CHIU, HT

WU, PF

机构：

[1] Department of Applied Chemistry, National Chiao Tung University, Hsinchu

来源：

JOURNAL OF THE CHINESE CHEMICAL SOCIETY | 1991年 / 38卷 / 03期

关键词：

LOW-PRESSURE CHEMICAL VAPOR DEPOSITION; ORGANOPOLYSILANES; SILICON CARBIDE THIN FILMS;

D O I：

10.1002/jccs.199100039

中图分类号：

O6 [化学];

学科分类号：

0703 ;

摘要：

(Me3Si)2SiMe2, (Me3Si)3SiMe and (Me3Si)4Si were used as precursors for the deposition of polycrystalline beta-SiC thin films on silicon substrates at 1000-1200-degrees-C in a low-pressure hot-wall chemical vapor deposition reactor. The thin films were analyzed by X-ray diffraction, scanning electron microscopy and X-ray photoelectron spectroscopy.

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页码：231 / 234

页数：4

相关论文

共 12 条

[1] FORMATION OF CYCLIC CARBOSILANES IN THE PYROLYSIS OF OCTAMETHYLTRISILANE [J].

BORTOLIN, BN ;

DAVIDSON, IMT ;

LANCASTER, D ;

SIMPSON, T ;

WILD, DA .

ORGANOMETALLICS, 1990, 9 (01) :281-284

[2]

EMIN D, 1987, MATERIALS RES SOC 2, V97

[3] A 1-STEP SYNTHESIS OF SOME SUBSTITUTED TRISILANES [J].

GILMAN, H ;

HARRELL, RL .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1966, 5 (02) :201-&

[4] TRIS(TRIMETHYLSILYL)SILYLLITHIUM-3 THF - A STABLE CRYSTALLINE SILYLLITHIUM REAGENT [J].

GUTEKUNST, G ;

BROOK, AG .

JOURNAL OF ORGANOMETALLIC CHEMISTRY, 1982, 225 (01) :1-3

[5] GROWTH CHARACTERISTICS OF ALPHA-SILICON CARBIDE .1. CHEMICAL VAPOR DEPOSITION [J].

HARRIS, JM ;

GATOS, HC ;

WITT, AF .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) :335-&

[6] ALUMINUM-CHLORIDE CATALYZED SKELETAL REARRANGEMENT OF PERMETHYLATED ACYCLIC POLYSILANES [J].

ISHIKAWA, M ;

IYODA, J ;

IKEDA, H ;

KOTAKE, K ;

HASHIMOTO, T ;

KUMADA, M .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1981, 103 (16) :4845-4850

[7] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J].

NISHINO, S ;

HAZUKI, Y ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) :2674-2680

[8] GROWTH AND MORPHOLOGY OF 6H-SIC EPITAXIAL LAYERS BY CVD [J].

NISHINO, S ;

MATSUNAMI, H ;

TANAKA, T .

JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) :144-149

[9]

WEST R, 1984, ULTRASTRUCTURE PRO 3, pCH19

[10] SYNTHESIS OF A POLYTITANOCARBOSILANE AND ITS CONVERSION INTO INORGANIC-COMPOUNDS [J].

YAJIMA, S ;

IWAI, T ;

YAMAMURA, T ;

OKAMURA, K ;

HASEGAWA, Y .

JOURNAL OF MATERIALS SCIENCE, 1981, 16 (05) :1349-1355