GROWTH AND MORPHOLOGY OF 6H-SIC EPITAXIAL LAYERS BY CVD

被引：43

作者：

NISHINO, S

MATSUNAMI, H

TANAKA, T

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1978年 / 45卷 / 01期

关键词：

D O I：

10.1016/0022-0248(78)90426-8

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：144 / 149

页数：6

共 12 条

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[7] EPITAXIAL-GROWTH OF ALPHA-SIC LAYERS BY CHEMICAL VAPOR-DEPOSITION TECHNIQUE [J].

MATSUNAMI, H ;

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ODAKA, M ;

TANAKA, T .

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[8] EPITAXIAL-GROWTH OF A-SIC FROM VAPOR-PHASE [J].

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[9] EPITAXIAL DEPOSITION OF SILICON-CARBIDE FROM SILICON TETRACHLORIDE AND HEXANE [J].

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[10]

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