CURRENT MECHANISM OF TUNNEL MIS SOLAR-CELLS

被引：13

作者：

NIELSEN, OM

机构：

来源：

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION | 1980年 / 127卷 / 06期

关键词：

D O I：

10.1049/ip-i-1.1980.0059

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：301 / 307

页数：7

共 24 条

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APPLIED PHYSICS LETTERS, 1975, 27 (05) :287-288

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APPLIED PHYSICS LETTERS, 1976, 29 (09) :610-612

[7]

GROVE AS, 1967, PHYS TECHNOL S, P108

[8] ROLE OF INTERFACE STATES IN MOS SOLAR-CELLS [J].

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JOURNAL OF APPLIED PHYSICS, 1978, 49 (10) :5278-5283

[9] EFFECTS OF INTERFACIAL OXIDE LAYERS ON PERFORMANCE OF SILICON SCHOTTKY-BARRIER SOLAR CELLS [J].

LILLINGTON, DR ;

TOWNSEND, WG .

APPLIED PHYSICS LETTERS, 1976, 28 (02) :97-98

[10] REQUIRED MINIMUM VALUE OF BARRIER HEIGHT IN MINORITY-CARRIER MIS SOLAR-CELLS [J].

NIELSEN, OM .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1980, 127 (03) :105-108

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