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MONOLITHIC OPTOELECTRONIC SWITCH BASED ON THE INTEGRATION OF A GAAS/ALGAAS HETEROJUNCTION BIPOLAR-TRANSISTOR AND A GAAS VERTICAL-CAVITY SURFACE-EMITTING LASER

被引：10
作者：
ZHOU, P
CHENG, J
ZOLPER, JC
LEAR, KL
CHALMERS, SA
VAWTER, GA
LEIBENGUTH, RE
ADAMS, AC
机构：
[1] SANDIA NATL LABS,ALBUQUERQUE,NM 87185
[2] AT&T BELL LABS,MURRAY HILL,NJ 07974
来源：
IEEE PHOTONICS TECHNOLOGY LETTERS | 1993年 / 5卷 / 09期
关键词：
D O I：
10.1109/68.257183
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We describe the design and the first experimental demonstration of a monolithic integrated optoelectronic switch combining a GaAs/AlGaAs heterojunction bipolar transistor (HBT) with a vertical-cavity surface-emitting laser (VCSEL). The switch has high current gain (500-700), low power dissipation (27 and 55 mW dc at optical output levels of 0.4 and 1.2 mW, respectively), and a high optical-to-electrical conversion efficiency (150 W/A) under dc bias conditions, thus providing a high-performance electrical-to-optical interface for high-speed optical interconnections.
引用
收藏
页码：1035 / 1038
页数：4
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