CHANNELING IMPLANTS OF BORON IN SILICON

80 keV B+ ions were implanted in <100> Si with a high-current implanter. The wafers were irradiated at 0-degrees and 7-degrees. The feasibility of the 0-degrees implants was checked testing the influence of several geometrical parameters, such as the twist angle and the flex angle, on the shape and uniformity of the ion depth distributions. The damage generated by a high-fluence B+ implant was lower for the 0-degrees implanted samples and the disorder evolution was analyzed after different annealing processes were performed in the 600-1200-degrees-C temperature range. Agglomeration and dissolution of extended defects in the 0-degrees implanted samples occurs at temperatures 100-degrees-C lower than those in the 7-degrees implanted samples.