GROWTH CONDITION DEPENDENCE OF CARBON-REDUCTION IN GAAS CHEMICAL BEAM EPITAXY USING TRISDIMETHYLAMINO-ARSINE AND TRIMETHYLGALLIUM

被引：7

作者：

ISHIKURA, K ^{[1
]}

TAKEUCHI, A ^{[1
]}

KURIHARA, M ^{[1
]}

MACHIDA, H ^{[1
]}

HASEGAWA, F ^{[1
]}

机构：

[1] TRI CHEM LAB INC, AIKAWA, KANAGAWA 24303, JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 4A期

关键词：

TDMAAS; TMGA; GAAS; CBE; CARBON GETTERING;

D O I：

10.1143/JJAP.33.L494

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

It was found that carbon incorporation in GaAs chemical beam epitaxy (CBE) using trisdimethylamino-arsine (TDMAAs) and trimethylgallium (TMGa) strongly depends on the V/III ratio and the cracking temperature of TDMAAs. Although a high concentration of carbon was incorporated for the growth with low V/III ratio, the carbon concentration was reduced to the order of 10(16) cm-3 at high V/III ratios. For the layer grown using TDMAAs precracked at 550-degrees-C by a cracker cell, the carbon concentration was above 10(19) cm-3. These results suggest that arsenic-dimethylamine (DMA) bonds rather than DMA itself play an important role in the carbon gettering mechanism.

引用

页码：L494 / L496

页数：3

共 11 条

[1] GROWTH OF GAAS AND ALGAAS BY METALORGANIC MOLECULAR-BEAM EPITAXY USING TRIS-DIMETHYLAMINOARSENIC [J].