CHARACTERIZATION OF CARBON-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY USING NEOPENTANE AS CARBON SOURCE

被引：3

作者：

SHIRAHAMA, M ^{[1
]}

NAGAO, K ^{[1
]}

TOKUMITSU, E ^{[1
]}

KONAGAI, M ^{[1
]}

TAKAHASHI, K ^{[1
]}

机构：

[1] TOKYO INST TECHNOL,DEPT PHYS ELECTR,MEGURO KU,TOKYO 152,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 12A期

关键词：

GAAS; CARBON; NEOPENTANE; MBE; HYDROGEN; ANNEALING;

D O I：

10.1143/JJAP.32.5473

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Neopentane C(CH-3)4, has been successfully used as a new carbon source in the molecular beam epitaxial MBE growth of carbon-doped GaAs. The hole concentration, which agrees with the carbon concentration, increases with increasing cracking temperature in the temperature range above 700-degrees-C. The highest hole concentration obtained using neopentane is 1.6 x 10(20) cm-3. Optical and electrical properties of a MBE-grown C-doped GaAs layer with neopentane are comparable to those of a metalorganic molecular beam epitaxy (MOMBE) grown C-doped GaAs layer using TMG and solid arsenic and MBE-grown Be-doped GaAs. The maximum hole concentration of 1.6 X 10(20) cm-3 increases to 2.5 x 10(20) cm-3 after annealing at 400-degrees-C for 1 h in N2 ambient. This is due to removal of hydrogen which passivates carbon acceptors in the as-grown GaAs.

引用

页码：5473 / 5478

页数：6

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