FINITE-ELEMENT ANALYSIS OF SKIN EFFECT RESISTANCE IN SUBMILLIMETER WAVE SCHOTTKY-BARRIER DIODES

被引:3
作者
CAMPBELL, JS [1 ]
WRIXON, GT [1 ]
机构
[1] NATL UNIV IRELAND UNIV COLL CORK,MICROELECTR RES CTR,CORK,IRELAND
关键词
D O I
10.1109/TMTT.1982.1131131
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:744 / 750
页数:7
相关论文
共 11 条
[1]   2-DIMENSIONAL SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENT METHOD [J].
ADACHI, T ;
YOSHII, A ;
SUDO, T .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1026-1031
[2]  
BARNES JJ, 1974, ELECTRON LETT, V10, P341, DOI 10.1049/el:19740270
[4]  
HILDEBRAND FB, 1952, METHODS APPLIED MATH
[5]  
IRONS BM, 1980, TECHNIQUES FINITE EL
[6]   CONVERSION LOSSES IN SCHOTTKY-BARRIER DIODE MIXERS IN THE SUBMILLIMETER REGION [J].
KELLY, WM ;
WRIXON, GT .
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :665-672
[7]  
KELLY WM, 1980, INFRARED MILLIMETER, V3
[8]  
LANGLEY JB, 1980, THESIS NATIONAL U IR
[9]  
SLOTBOOM JW, 1973, IEEE T ELECTRON DEVI, V20, P869
[10]  
WRIXON GT, 1975, P I PHYS C SERIES, V24, P55