FINITE-ELEMENT ANALYSIS OF SKIN EFFECT RESISTANCE IN SUBMILLIMETER WAVE SCHOTTKY-BARRIER DIODES

被引：3

作者：

CAMPBELL, JS ^{[1
]}

WRIXON, GT ^{[1
]}

机构：

[1] NATL UNIV IRELAND UNIV COLL CORK,MICROELECTR RES CTR,CORK,IRELAND

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1982年 / 30卷 / 05期

关键词：

D O I：

10.1109/TMTT.1982.1131131

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：744 / 750

页数：7

共 11 条

[1] 2-DIMENSIONAL SEMICONDUCTOR ANALYSIS USING FINITE-ELEMENT METHOD [J].

ADACHI, T ;

YOSHII, A ;

SUDO, T .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (07) :1026-1031

[2] 2-DIMENSIONAL FINITE-ELEMENT SIMULATION OF SEMICONDUCTOR-DEVICES [J].

BARNES, JJ ;

LOMAX, RJ .

ELECTRONICS LETTERS, 1974, 10 (16) :341-343

[3] SELF-CONSISTENT ITERATIVE SCHEME FOR 1-DIMENSIONAL STEADY STATE TRANSISTOR CALCULATIONS [J].

GUMMEL, HK .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (10) :455-&

[4]

HILDEBRAND FB, 1952, METHODS APPLIED MATH

[5]

IRONS BM, 1980, TECHNIQUES FINITE EL

[6] CONVERSION LOSSES IN SCHOTTKY-BARRIER DIODE MIXERS IN THE SUBMILLIMETER REGION [J].

KELLY, WM ;

WRIXON, GT .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1979, 27 (07) :665-672

[7]

KELLY WM, 1980, INFRARED MILLIMETER, V3

[8]

LANGLEY JB, 1980, THESIS NATIONAL U IR

[9]

SLOTBOOM JW, 1973, IEEE T ELECTRON DEVI, V20, P869

[10]

WRIXON GT, 1975, P I PHYS C SERIES, V24, P55

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