SEM AND TEM STUDIES OF DEFECTS IN SI-DOPED GAAS SUBSTRATE MATERIAL BEFORE AND AFTER ZN DIFFUSION

被引：9

作者：

DARBY, DB ^{[1
]}

AUGUSTUS, PD ^{[1
]}

BOOKER, GR ^{[1
]}

STIRLAND, DJ ^{[1
]}

机构：

[1] PLESSEY CO LTD,ALLEN CLARK RES CTR,TOWCHESTER NN12 8EQ,NORTHAMPTONSHIR,ENGLAND

来源：

JOURNAL OF MICROSCOPY-OXFORD | 1980年 / 118卷 / MAR期

关键词：

D O I：

10.1111/j.1365-2818.1980.tb00283.x

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：343 / 349

页数：7

共 9 条

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BUIOCCHI, CJ .

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[2] THE JUNCTION DEPTH OF CONCENTRATION-DEPENDENT DIFFUSION - ZINC IN III-V COMPOUNDS [J].

CHANG, LL .

SOLID-STATE ELECTRONICS, 1964, 7 (12) :853-859

[3]

DAVIDSON SM, 1977, J MICROSC-OXFORD, V110, P177, DOI 10.1111/j.1365-2818.1977.tb00032.x

[4] RAPID ZINC DIFFUSION IN GALLIUM ARSENIDE [J].

LONGINI, RL .

SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :127-130

[5]

PETTIT HR, 1971, I PHYS C SER, P290

[6]

SCHUMANN PA, 1970, SOLID STATE TECH JAN, P50

[7] DETERMINATION OF OPTICAL CONSTANTS AND CARRIER EFFECTIVE MASS OF SEMICONDUCTORS [J].

SPITZER, WG ;

FAN, HY .

PHYSICAL REVIEW, 1957, 106 (05) :882-890

[8] IDENTIFICATION OF SAUCER-PIT (S-PIT) DEFECTS IN GAAS [J].

STIRLAND, DJ ;

AUGUSTUS, PD ;

STRAUGHAN, BW .

JOURNAL OF MATERIALS SCIENCE, 1978, 13 (03) :657-665

[9] ANISOTROPIC ETCHING BEHAVIOR OF GALLIUM-ARSENIDE JUNCTIONS [J].

STIRLAND, DJ .

JOURNAL OF MATERIALS SCIENCE, 1974, 9 (06) :969-980

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