ROOM-TEMPERATURE PHOTOLUMINESCENCE IN STRAINED QUANTUM-WELLS OF INGAAS GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引：16

作者：

MARTELLI, F ^{[1
]}

PROIETTI, MG ^{[1
]}

SIMEONE, MG ^{[1
]}

BRUNI, MR ^{[1
]}

ZUGARINI, M ^{[1
]}

机构：

[1] CNR,ITSE,I-00016 MONTEROTONDO,ITALY

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 01期

关键词：

D O I：

10.1063/1.350697

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In this work first room-temperature photoluminescence in strained single and multiple quantum wells of InxGa1-xAs/GaAs grown by molecular-beam epitaxy is presented. The In mole fraction x varies from 0.06 to 0.23 and the well width from 5 to 20 nm. The data suggest that carrier generation in the well is caused by trapping carriers photoexcited in GaAs. The thermal behavior of this mechanism must be taken into account when the temperature dependence of the luminescence is analyzed.

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页码：539 / 541

页数：3

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