BULK TRAPS IN SILICON-ON-SAPPHIRE BY CONDUCTANCE DLTS

被引：18

作者：

CHEN, JW

KO, RJ

BRZEZINSKI, DW

FORBES, L

DELLOCA, CJ

机构：

[1] HEWLETT PACKARD CO,ICL,PALO ALTO,CA 94304

[2] UNIV CALIF DAVIS,DAVIS,CA 95616

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1981年 / 28卷 / 03期

关键词：

D O I：

10.1109/T-ED.1981.20332

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / 304

页数：6

共 17 条

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[8] IMPURITY CENTERS IN SILICON FILMS ON SAPPHIRE [J].

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[9] DEEP-LEVEL TRANSIENT SPECTROSCOPY - NEW METHOD TO CHARACTERIZE TRAPS IN SEMICONDUCTORS [J].

LANG, DV .

JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3023-3032

[10] FAST CAPACITANCE TRANSIENT APPARATUS - APPLICATION TO ZNO AND O CENTERS IN GAP PARANORMAL JUNCTIONS [J].

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