IMPURITY CENTERS IN SILICON FILMS ON SAPPHIRE

被引：19

作者：

IPRI, AC

ZEMEL, JN

机构：

[1] RCA CORP,PRINCETON,NJ 08540

[2] UNIV PENN,PHILADELPHIA,PA 19104

来源：

JOURNAL OF APPLIED PHYSICS | 1973年 / 44卷 / 02期

关键词：

D O I：

10.1063/1.1662256

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：744 / 751

页数：8

共 19 条

[1]

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[2]

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[3]

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[4]

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[5] PREPARATION AND PROPERTIES OF CHEMICALLY VAPOR DEPOSITED SILICON ON SAPPHIRE AND SPINEL [J].

CULLEN, GW .

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[6] DEFORMATION OF AND STRESS IN EPITAXIAL SILICON FILMS ON SINGLE-CRYSTAL SAPPHIRE [J].

DUMIN, DJ .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (09) :2700-&

[7] TEMPERATURE DEPENDENCE OF HALL MOBILITY AND CARRIER CONCENTRATION IN SILICON-ON-SAPPHIRE FILMS [J].

DUMIN, DJ ;

ROSS, EC .

JOURNAL OF APPLIED PHYSICS, 1970, 41 (07) :3139-&

[8] NEUTRAL IMPURITY SCATTERING IN SEMICONDUCTORS [J].

ERGINSOY, C .

PHYSICAL REVIEW, 1950, 79 (06) :1013-1014

[9] REACTIONS OF GROUP-III ACCEPTORS WITH OXYGEN IN SILICON CRYSTALS [J].

FULLER, CS ;

DOLEIDEN, FH ;

WOLFSTIRN, K .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 13 (3-4) :187-203

[10] THIN-FILM SILICON-ON-SAPPHIRE DEEP DEPLETION MOS TRANSISTORS [J].

HEIMAN, FP .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (12) :855-+

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