STRUCTURAL ORDER IN A-SI-H-C1 FILMS

被引：5

作者：

DANESH, P ^{[1
]}

SAVATINOVA, I ^{[1
]}

ANACHKOVA, E ^{[1
]}

GEORGIEV, S ^{[1
]}

ANASTASSAKIS, E ^{[1
]}

LIAROKAPIS, E ^{[1
]}

机构：

[1] NATL TECH UNIV ATHENS,DEPT PHYS,GR-15773 ATHENS,GREECE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1987年 / 90卷 / 1-3期

关键词：

D O I：

10.1016/S0022-3093(87)80432-5

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：303 / 306

页数：4

共 6 条

[1] STRUCTURAL INFORMATION FROM THE RAMAN-SPECTRUM OF AMORPHOUS-SILICON [J].

BEEMAN, D ;

TSU, R ;

THORPE, MF .

PHYSICAL REVIEW B, 1985, 32 (02) :874-878

[2] GLOW-DISCHARGE DEPOSITION OF CHLORINATED AND HYDROGENATED AMORPHOUS-SILICON FILMS FROM SICL4-SIH4 [J].

DANESH, P ;

GEORGIEV, S ;

JAHN, U .

SOLAR ENERGY MATERIALS, 1984, 9 (04) :405-413

[3]

GONZALEZHERNAND.J, 1985, SPIE, V524

[4] STRUCTURAL AND SOME OTHER PROPERTIES OF SILICON DEPOSITED IN AN SICL4-H2 RF DISCHARGE [J].

IQBAL, Z ;

CAPEZZUTO, P ;

BRAUN, M ;

OSWALD, HR ;

VEPREK, S ;

BRUNO, G ;

CRAMAROSSA, F ;

STUSSI, H ;

BRUNNER, J ;

SCHARLI, M .

THIN SOLID FILMS, 1982, 87 (01) :43-51

[5] RAMAN STUDIES ON LOCAL STRUCTURAL DISORDER IN SILICON-BASED AMORPHOUS-SEMICONDUCTOR FILMS [J].

MORIMOTO, A ;

OOZORA, S ;

KUMEDA, M ;

SHIMIZU, T .

SOLID STATE COMMUNICATIONS, 1983, 47 (10) :773-777

[6] DETERMINATION OF ENERGY BARRIER FOR STRUCTURAL RELAXATION IN A-SI AND A-GE BY RAMAN-SCATTERING [J].

TSU, R ;

HERNANDEZ, JG ;

POLLAK, FH .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1984, 66 (1-2) :109-114

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