GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP

被引：22

作者：

HOUSTON, PA

机构：

来源：

JOURNAL OF MATERIALS SCIENCE | 1981年 / 16卷 / 11期

关键词：

D O I：

10.1007/BF00540299

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：2935 / 2961

页数：27

共 155 条

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SAKAI, K ;

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ELECTRONICS LETTERS, 1979, 15 (19) :606-607

[4] IN0.53GA0.47AS-IN1-XGAXASYP1-Y DOUBLE HETEROSTRUCTURE LASERS WITH EMISSION WAVELENGTH OF 1.67MU-M AT ROOM-TEMPERATURE [J].

AKIBA, S ;

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[5]

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[6] DISTRIBUTION COEFFICIENTS OF GA, AS, AND P DURING GROWTH OF INGAASP LAYERS BY LIQUID-PHASE EPITAXY [J].

ANTYPAS, GA ;

EDGECUMBE, J .

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[7] GROWTH CHARACTERIZATION OF INP-INGAASP LATTICE-MATCHED HETEROJUNCTIONS [J].

ANTYPAS, GA ;

MOON, RL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1973, 120 (11) :1574-1577

[8] INCORPORATION OF GA DURING LPE GROWTH OF IN0.53GA0.47AS ON (111)B AND (100) INP SUBSTRATES [J].

ANTYPAS, GA ;

HOUNG, YM ;

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GREGORY, PE .

APPLIED PHYSICS LETTERS, 1978, 33 (05) :463-465

[9]

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[10]

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