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GROWTH AND CHARACTERIZATION OF INGAASP LATTICE-MATCHED TO INP
被引:22
作者
:
HOUSTON, PA
论文数:
0
引用数:
0
h-index:
0
HOUSTON, PA
机构
:
来源
:
JOURNAL OF MATERIALS SCIENCE
|
1981年
/ 16卷
/ 11期
关键词
:
D O I
:
10.1007/BF00540299
中图分类号
:
T [工业技术];
学科分类号
:
08 ;
摘要
:
引用
收藏
页码:2935 / 2961
页数:27
相关论文
共 155 条
[11]
ANTYPAS GA, 1976, 1976 P C GALL ARS RE, P96
[12]
1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
:197
-205
[13]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[14]
CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
;
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
KATAYAMA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(11)
:2067
-2068
[15]
NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
.
ELECTRONICS LETTERS,
1980,
16
(10)
:349
-350
[16]
PROPERTIES OF MOLECULAR-BEAM EPITAXIAL INXGA1-XAS(X-ALMOST-EQUAL-TO-0.53) LAYERS GROWN ON INP SUBSTRATES
[J].
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
ASAHI, H
;
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
OKAMOTO, H
;
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
IKEDA, M
;
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
KAWAMURA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:565
-573
[17]
INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
.
APPLIED PHYSICS LETTERS,
1978,
32
(07)
:446
-448
[18]
INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
[J].
BAUMANN, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BAUMANN, GG
;
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
;
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(08)
:1232
-1235
[19]
GA-IN-AS SOLIDUS ISOTHERMS DEVELOPED BY THE STEP-GRADING TECHNIQUE
[J].
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
BEDAIR, SM
;
MORRISON, C
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
MORRISON, C
;
FANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
FANG, R
;
ELMASRY, NA
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
ELMASRY, NA
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(10)
:5413
-5418
[20]
THE IN-GA-AS-ZN SYSTEM - LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON (111) B INP SUBSTRATES
[J].
BENCHIMOL, JL
论文数:
0
引用数:
0
h-index:
0
BENCHIMOL, JL
;
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
QUILLEC, M
;
LECORNEC, C
论文数:
0
引用数:
0
h-index:
0
LECORNEC, C
;
LEROUX, G
论文数:
0
引用数:
0
h-index:
0
LEROUX, G
.
APPLIED PHYSICS LETTERS,
1980,
36
(06)
:454
-456
←
1
2
3
4
5
6
7
8
9
10
→
共 155 条
[11]
ANTYPAS GA, 1976, 1976 P C GALL ARS RE, P96
[12]
1.11-1.67 MU-M (100) GAINASP-INP INJECTION-LASERS PREPARED BY LIQUID-PHASE EPITAXY
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
.
IEEE JOURNAL OF QUANTUM ELECTRONICS,
1980,
16
(02)
:197
-205
[13]
1.67-MU-M GA0.47IN0.53AS-INP DH LASERS DOUBLE CLADDED WITH INP BY LPE TECHNIQUE
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ARAI, S
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Department of Physical Electronics, Tokyo Institute of Technology, O-okayama, Meguro-ku
ITAYA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:709
-710
[14]
CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
;
KATAYAMA, S
论文数:
0
引用数:
0
h-index:
0
KATAYAMA, S
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1978,
17
(11)
:2067
-2068
[15]
NEW 1-6-MU-M WAVELENGTH GAINASP-INP BURIED HETEROSTRUCTURE LASERS
[J].
ARAI, S
论文数:
0
引用数:
0
h-index:
0
ARAI, S
;
ASADA, M
论文数:
0
引用数:
0
h-index:
0
ASADA, M
;
SUEMATSU, Y
论文数:
0
引用数:
0
h-index:
0
SUEMATSU, Y
;
ITAYA, Y
论文数:
0
引用数:
0
h-index:
0
ITAYA, Y
;
TANBUNEK, T
论文数:
0
引用数:
0
h-index:
0
TANBUNEK, T
;
KISHINO, K
论文数:
0
引用数:
0
h-index:
0
KISHINO, K
.
ELECTRONICS LETTERS,
1980,
16
(10)
:349
-350
[16]
PROPERTIES OF MOLECULAR-BEAM EPITAXIAL INXGA1-XAS(X-ALMOST-EQUAL-TO-0.53) LAYERS GROWN ON INP SUBSTRATES
[J].
ASAHI, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
ASAHI, H
;
OKAMOTO, H
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
OKAMOTO, H
;
IKEDA, M
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
IKEDA, M
;
KAWAMURA, Y
论文数:
0
引用数:
0
h-index:
0
机构:
Musashino Electrical Communication Laboratory, Nippon Telegraph and Telephone Public Corporation, Musashino
KAWAMURA, Y
.
JAPANESE JOURNAL OF APPLIED PHYSICS,
1979,
18
(03)
:565
-573
[17]
INGAAS DETECTOR FOR 1.0-1.7-MUM WAVELENGTH RANGE
[J].
BACHMANN, KJ
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
BACHMANN, KJ
;
SHAY, JL
论文数:
0
引用数:
0
h-index:
0
机构:
BELL TEL LABS INC,HOLMDEL,NJ 07733
BELL TEL LABS INC,HOLMDEL,NJ 07733
SHAY, JL
.
APPLIED PHYSICS LETTERS,
1978,
32
(07)
:446
-448
[18]
INCORPORATION OF SI IN LIQUID-PHASE EPITAXIAL INP LAYERS
[J].
BAUMANN, GG
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BAUMANN, GG
;
BENZ, KW
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
BENZ, KW
;
PILKUHN, MH
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV STUTTGART,INST PHYS,D-7000 STUTTGART 80,FED REP GER
PILKUHN, MH
.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY,
1976,
123
(08)
:1232
-1235
[19]
GA-IN-AS SOLIDUS ISOTHERMS DEVELOPED BY THE STEP-GRADING TECHNIQUE
[J].
BEDAIR, SM
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
BEDAIR, SM
;
MORRISON, C
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
MORRISON, C
;
FANG, R
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
FANG, R
;
ELMASRY, NA
论文数:
0
引用数:
0
h-index:
0
机构:
N CAROLINA STATE UNIV,DEPT ELECT ENGN,RALEIGH,NC 27607
ELMASRY, NA
.
JOURNAL OF APPLIED PHYSICS,
1980,
51
(10)
:5413
-5418
[20]
THE IN-GA-AS-ZN SYSTEM - LPE GROWTH-CONDITIONS FOR LATTICE MATCHING ON (111) B INP SUBSTRATES
[J].
BENCHIMOL, JL
论文数:
0
引用数:
0
h-index:
0
BENCHIMOL, JL
;
QUILLEC, M
论文数:
0
引用数:
0
h-index:
0
QUILLEC, M
;
LECORNEC, C
论文数:
0
引用数:
0
h-index:
0
LECORNEC, C
;
LEROUX, G
论文数:
0
引用数:
0
h-index:
0
LEROUX, G
.
APPLIED PHYSICS LETTERS,
1980,
36
(06)
:454
-456
←
1
2
3
4
5
6
7
8
9
10
→