PROPERTIES OF AMORPHOUS-SILICON THIN-FILMS GROWN IN SQUARE-WAVE MODULATED SILANE RF DISCHARGES

被引：10

作者：

ANDUJAR, JL ^{[1
]}

BERTRAN, E ^{[1
]}

CANILLAS, A ^{[1
]}

CAMPMANY, J ^{[1
]}

SERRA, J ^{[1
]}

ROCH, C ^{[1
]}

LLORET, A ^{[1
]}

机构：

[1] ECOLE POLYTECH,PHYS INTERFACES & COUCHES MINCES LAB,CNRS,UPR 0258,F-91128 PALAISEAU,FRANCE

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 03期

关键词：

D O I：

10.1063/1.351229

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Hydrogenated amorphous silicon (a-Si:H) thin films have been obtained from pure SiH4 rf discharges by using the square wave modulation (SQWM) method. Film properties have been studied by means of spectroellipsometry, thermal desorption spectrometry, photothermal deflection spectroscopy and electrical conductivity measurements, as a function of the modulation frequency of the rf power amplitude (0.2-4000 Hz). The films deposited at frequencies about 1 kHz show the best structural and optoelectronic characteristics. Based upon the experimental results, a qualitative model is presented, which points up the importance of plasma negative ions in the deposition of a-Si:H from SQWM rf discharges through their influence on powder particle formation.

引用

页码：1546 / 1548

页数：3

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