ION RANGE AND DAMAGE DEPTH PARAMETERS FOR 20-200 KEVPB+ ION-IMPLANTATION IN SI

被引：9

作者：

CHRISTODOULIDES, CE ^{[1
]}

KADHIM, NJ ^{[1
]}

CARTER, G ^{[1
]}

JIMENEZRODRIGUEZ, JJ ^{[1
]}

GRASMARTI, A ^{[1
]}

机构：

[1] UNIV SALFORD,DEPT ELECT ENGN,SALFORD M5 4WT,LANCASHIRE,ENGLAND

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH | 1981年 / 191卷 / 1-3期

关键词：

D O I：

10.1016/0029-554X(81)90994-0

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：124 / 134

页数：11

共 26 条

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CARTER, G
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TITOV, AI
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[2] FLUX, FLUENCE AND IMPLANTATION TEMPERATURE-DEPENDENCE OF DISORDER PRODUCED BY 40 KEV N+ ION IRRADIATION OF GAAS
AHMED, NAG
CHRISTODOULIDES, CE
CARTER, G
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 211 - 224
[3] Z1-OSCILLATIONS IN LOW-ENERGY HEAVY-ION RANGES
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LOFTAGER, P
MOLLER, W
[J]. NUCLEAR INSTRUMENTS & METHODS, 1980, 170 (1-3): : 183 - 188
[4] BOGH E, 1971, 1ST P INT C ION IMPL, P51
[5] BOTTIGER J, 1972, ION IMPLANTATION SEM, P599
[6] Carter G., 1976, ION IMPLANTATION SEM
[7] FLUENCE DEPENDENCE OF DISORDER DEPTH PROFILES IN PB IMPLANTED SI
CHRISTODOULIDES, CE
KADHIM, NJ
CARTER, G
[J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 52 (3-4): : 225 - 234
[8] CHRISTODOULIDES CE, 1980, RAD EFFECTS, V48
[9] EISEN FH, 1973, CHANNELING, P415
[10] JIMENEZRODRIGUE.JJ, 1977, THESIS U MADRID