STUDY OF ZN-ASSOCIATED LEVELS IN GAN

被引：5

作者：

KHAN, MRH ^{[1
]}

SAWAKI, N ^{[1
]}

AKASAKI, I ^{[1
]}

机构：

[1] NAGOYA UNIV,DEPT ELECTR,CHIKUSA KU,NAGOYA,AICHI 464,JAPAN

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 04期

关键词：

D O I：

10.1088/0268-1242/7/4/006

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The violet-blue emission band due to the incorporation of Zn in GaN has been studied and has been shown to possess a complex behaviour involving both donor-acceptor (D-A) pair and self-activated (S-A) pair properties. A Zn concentration dependence and temperature dependence of this emission has been shown. An attempt to present and analyse the transition process by a suitable model is reported.

引用

页码：472 / 477

页数：6

共 34 条

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