INTERPRETATION OF DESTRUCTIVE BREAKDOWN IN THIN DIELECTRIC FILMS

[1] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2837 - +

[2] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02): : 289 - +

[3] AC ELECTRICAL BREAKDOWN IN THIN SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3721 - +

[4] MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 281 - +

[5] KLEIN N, 1964, SEP S PHYS FAIL EL C

[6] KLEIN N, 1967, 1578 NAT AC SCI PUB, P108

[1] BREAKDOWN CONDUCTION IN AL-SIO-AL CAPACITORS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (07) : 2837 - +

[2] DESTRUCTIVE BREAKDOWN IN THIN FILMS OF SIO MGF2 CAF2 CEF3 CEO2 AND TEFLON [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1969, 6 (02): : 289 - +

[3] AC ELECTRICAL BREAKDOWN IN THIN SILICON OXIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1967, 38 (09) : 3721 - +

[4] MAXIMUM DIELECTRIC STRENGTH OF THIN SILICON OXIDE FILMS [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1966, ED13 (02) : 281 - +

[5] KLEIN N, 1964, SEP S PHYS FAIL EL C

[6] KLEIN N, 1967, 1578 NAT AC SCI PUB, P108