TRANSIENT EXPERIMENTS FROM THE STEADY-STATE IN AMORPHOUS-SILICON - WEAK RECOMBINATION AND DENSITY OF STATES

We have performed transient experiments from the steady state in hydrogenated amorphous silicon. Based on multiple trapping theory and assuming a decreasing density of states towards the conduction band edge, we explain successfully the decay behavior. We also find that the material studied falls in the weak recombination regime, i.e., trapping being a faster process than recombination. Finally, the temperature dependence of the capture coefficient and the energy dependence of the attempt-to-escape frequency are reported for this system. © 1990.