SUPER LOW-NOISE HEMTS WITH A T-SHAPED WSIX GATE

被引：20

作者：

HANYU, I ^{[1
]}

ASAI, S ^{[1
]}

NUNOKAWA, M ^{[1
]}

JOSHIN, K ^{[1
]}

HIRACHI, Y ^{[1
]}

OHMURA, S ^{[1
]}

AOKI, Y ^{[1
]}

AIGO, T ^{[1
]}

机构：

[1] FUJITSU LABS LTD,NAKAHARA KU,KAWASAKI,KANAGAWA 211,JAPAN

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 21期

关键词：

D O I：

10.1049/el:19880902

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1327 / 1328

页数：2

共 9 条

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[3]

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[4]

JOSHIN K, 1984, 16TH C SOL STAT DEV, P347

[5]

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[6]

Katsukawa K., 1984, 22nd Annual Proceedings on Reliability Physics 1984 (Catalog No. 84CH1990-1), P59, DOI 10.1109/IRPS.1984.362020

[7] SUBMICROMETER LIFT-OFF LINE WITH T-SHAPED CROSS-SECTIONAL FORM [J].

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NARUKE, Y .

ELECTRONICS LETTERS, 1981, 17 (12) :429-430

[8] DOUBLE-LAYER RESIST FILMS FOR SUBMICROMETER ELECTRON-BEAM LITHOGRAPHY [J].

TODOKORO, Y .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1443-1448

[9] A GAAS 1K STATIC RAM USING TUNGSTEN SILICIDE GATE SELF-ALIGNED TECHNOLOGY [J].

YOKOYAMA, N ;

OHNISHI, T ;

ONODERA, H ;

SHINOKI, T ;

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ISHIKAWA, H .

IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1983, 18 (05) :520-524

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