CHARACTERIZATION AND ELECTRONIC-PROPERTIES OF THE TB/SI(111)7X7 INTERFACE

被引：4

作者：

KENNOU, S ^{[1
]}

VEUILLEN, JY ^{[1
]}

TAN, TAN ^{[1
]}

机构：

[1] UNIV JOSEPH FOURIER,LEPES,CNRS,F-38042 GRENOBLE,FRANCE

来源：

APPLIED SURFACE SCIENCE | 1992年 / 56-8卷

关键词：

D O I：

10.1016/0169-4332(92)90281-2

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The interaction of Tb with Si(111)7 x 7 at room temperature for various Tb coverages has been studied by photoelectron spectroscopy (UPS, XPS), AES and WF measurements. The experimental results indicate that Tb forms a two-dimensional layer up to 2 angstrom as it is shown by the shift of Tb4f and 4d states. For greater coverages a reaction of Tb and Si starts evidenced by the reacted Si 2p component, and the change of the Si Auger KLL line shape. The interacted interface extends until 12 angstrom of Tb thickness where metallic Tb begins to build up.

引用

页码：520 / 524

页数：5

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