PHOTOEMISSION FROM THE SI/LA INTERFACE

被引：12

作者：

PUPPIN, E ^{[1
]}

GUYOT, H ^{[1
]}

SHEN, ZX ^{[1
]}

HWANG, J ^{[1
]}

LINDAU, I ^{[1
]}

机构：

[1] STANFORD UNIV,STANFORD ELECTR LABS,STANFORD,CA 94305

来源：

SOLID STATE COMMUNICATIONS | 1988年 / 67卷 / 01期

关键词：

D O I：

10.1016/0038-1098(88)90007-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：23 / 27

页数：5

共 12 条

[1] CORE PHOTOEMISSION-STUDY OF THE EARLY FORMATION STAGE OF SI(111)-BA INTERFACE [J].

ABBATI, I ;

BRAICOVICH, L ;

DELPENNINO, U ;

NANNARONE, S ;

ROSSI, G ;

LINDAU, I .

SURFACE SCIENCE, 1985, 162 (1-3) :645-650

[2] SYNCHROTRON RADIATION STUDIES OF THE EFFECT OF THERMAL-TREATMENT ON THE SI(111)-YB INTERFACES [J].

BRAICOVICH, L ;

ABBATI, I ;

CARBONE, C ;

NOGAMI, J ;

LINDAU, I .

SURFACE SCIENCE, 1986, 168 (1-3) :193-203

[3]

BRAICOVICH L, 1987, ABSORPTION REACTION

[4] ELECTRONIC PROPERTIES OF SILICON-TRANSITION METAL INTERFACE COMPOUNDS [J].

Calandra, C. ;

Bisi, O. ;

Ottaviani, G. .

SURFACE SCIENCE REPORTS, 1985, 4 (5-6) :271-364

[5] THE SILICON GADOLINIUM INTERFACE AT ROOM-TEMPERATURE [J].

CARBONE, C ;

NOGAMI, J ;

LINDAU, I .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1985, 3 (03) :972-973

[6] SAMARIUM VALENCE CHANGES AND REACTIVE INTERDIFFUSION AT THE SI(LLL)-SM INTERFACE [J].

FRANCIOSI, A ;

WEAVER, JH ;

PERFETTI, P ;

KATNANI, AD ;

MARGARITONDO, G .

SOLID STATE COMMUNICATIONS, 1983, 47 (06) :427-430

[7] MODELING A HETEROGENEOUS METAL-SEMICONDUCTOR INTERFACE - CE ON SI(111) [J].

GRIONI, M ;

JOYCE, J ;

DELGIUDICE, M ;

ONEILL, DG ;

WEAVER, JH .

PHYSICAL REVIEW B, 1984, 30 (12) :7370-7373

[8] COMPUTER-PROGRAM FOR PHOTOEMISSION DATA-ANALYSIS AND DISPLAY [J].

MAHOWALD, PH ;

FRIEDMAN, DJ ;

CAREY, GP ;

BERTNESS, KA ;

YEH, JJ .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (05) :2982-2985

[9] A PHOTOEMISSION-STUDY OF THE SI(111)/GD INTERFACE - A COMPARISON WITH THE BULK SILICIDES [J].

PUPPIN, E ;

NOGAMI, J ;

CARBONE, C ;

SHEN, ZX ;

LINDAU, I ;

PATE, BB ;

ABBATI, I ;

BRAICOVICH, L .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1987, 5 (04) :1083-1086

[10] D-METAL AND F-METAL INTERFACE FORMATION ON SILICON [J].

ROSSI, G .

SURFACE SCIENCE REPORTS, 1987, 7 (1-2) :1-101

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