ELECTROCHEMICAL MEASUREMENTS OF INTERFACE STATES AT THE GAAS-OXIDE INTERFACE

被引:51
作者
FRESE, KW
MORRISON, SR
机构
[1] SRI International, Menlo Park
关键词
anodic oxides; electrolyte contact; interface states; semiconductors;
D O I
10.1149/1.2129248
中图分类号
O646 [电化学、电解、磁化学];
学科分类号
081704 ;
摘要
Electrochemical measurements are used to measure the interface state density at the GaAs/oxide interface. The techniques are described, including, for example, the use of dimethyl formamide as the solvent to avoid etching the oxide. The advantages of the “EOS” meaasurement over the standard MOS measurement are outlined and demonstrated. Several advantages are realized, stemming primarily from the fact that the inert electrolyte blocks the current flow. With the MOS technique, a conducting oxide can make the interpretation very difficult. Preliminary measurements on clean and anodi-cally oxidized n- and p-type GaAs are presented. The interface state density is shown to be sensitive to anodization current programming and to low temperature annealing of the oxides. © 1979, The Electrochemical Society, Inc. All rights reserved.
引用
收藏
页码:1235 / 1241
页数:7
相关论文
共 17 条
  • [1] STRUCTURE OF SEMICONDUCTOR-ELECTROLYTE INTERFACE
    BODDY, PJ
    [J]. JOURNAL OF ELECTROANALYTICAL CHEMISTRY, 1965, 10 (03): : 199 - &
  • [2] IMPROVED ENHANCEMENT-DEPLETION GAAS MOSFET USING ANODIC OXIDE AS GATE INSULATOR
    COLQUHOUN, A
    KOHN, E
    HARTNAGEL, HL
    [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1978, 25 (03) : 375 - 376
  • [3] INVESTIGATION ON FREQUENCY-DEPENDENCE OF IMPEDANCE OF NEARLY IDEALLY POLARIZABLE SEMICONDUCTOR ELECTRODES CDSE, CDS AND TIO2
    DUTOIT, EC
    VANMEIRHAEGHE, RL
    CARDON, F
    GOMES, WP
    [J]. BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1975, 79 (12): : 1206 - 1213
  • [4] GERISCHER H, 1970, PHYSICAL CHEM ADV A, V9, pCH5
  • [5] Goetzberger A., 1976, Critical Reviews in Solid State Sciences, V6, P1, DOI 10.1080/10408437608243548
  • [6] HAISTY RW, 1961, J ELECTROCHEM SOC, V108, P790
  • [7] HALE JM, 1971, REACTIONS MOL ELECTR, P236
  • [8] ANODIC-OXIDATION OF GAAS IN MIXED SOLUTIONS OF GLYCOL AND WATER
    HASEGAWA, H
    HARTNAGEL, HL
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1976, 123 (05) : 713 - 723
  • [9] NEW ANODIC NATIVE OXIDE OF GAAS WITH IMPROVED DIELECTRIC AND INTERFACE PROPERTIES
    HASEGAWA, H
    FORWARD, KE
    HARTNAGEL, HL
    [J]. APPLIED PHYSICS LETTERS, 1975, 26 (10) : 567 - 569
  • [10] Influence of Temperature on Anodically Grown Native Oxides on Gallium Arsenide
    Ishii, T.
    Jeppsson, B.
    [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (11) : 1784 - 1794