A COMPARISON OF HG1-XCDXTE MOCVD FILMS ON LATTICE-MATCHED (CDZN)TE AND CD(TESE) SUBSTRATES

被引：10

作者：

BEVAN, MJ ^{[1
]}

DOYLE, NJ ^{[1
]}

SNYDER, D ^{[1
]}

机构：

[1] CARNEGIE MELLON UNIV,DEPT CHEM ENGN,PITTSBURGH,PA 15213

来源：

JOURNAL OF CRYSTAL GROWTH | 1990年 / 102卷 / 04期

关键词：

Semiconducting Cadmium Compounds;

D O I：

10.1016/0022-0248(90)90843-A

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Epitaxial layers of Hg1-xCdxTe have been grown by metalorganic chemical vapor deposition (MOCVD) with the interdiffused multilayer process using the tellurium precursor diisopropyltelluride. A comparison is made of the structural quality of the films on lattice-matched substrates of (CdZn)Te and Cd(TeSe) using X-ray diffraction techniques. The interdiffused technique using deposition rates in excess of 10 μm/h is not detrimental to the crystal quality, and Hg1-xCdxTe was grown of comparable quality to that of the substrate. The epilayers are free of twinning and have the lowest values of rocking curve widths reported for MOCVD Hg1-xCdxTe. The as-grown films were p-type at 77 K, consistent with an anticipated mercury vacancy concentration of 7 x 1016 cm-3. © 1990.

引用

页码：785 / 792

页数：8

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