A NOVEL ANALYTICAL THRESHOLD VOLTAGE MODEL OF MOSFETS WITH IMPLANTED CHANNELS

被引：14

作者：

DASGUPTA, A

LAHIRI, SK

机构：

来源：

INTERNATIONAL JOURNAL OF ELECTRONICS | 1986年 / 61卷 / 05期

关键词：

D O I：

10.1080/00207218608920909

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：655 / 669

页数：15

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