MBE SIMGEN STRAINED MONOLAYER SUPERLATTICES

被引：1

作者：

KALLEL, MA

ARBETENGELS, V

WANG, KL

KARUNASIRI, RPG

机构：

[1] Device Research Laboratory, Electrical Engineering Department, University of California, Los Angeles

来源：

JOURNAL OF CRYSTAL GROWTH | 1991年 / 111卷 / 1-4期

关键词：

D O I：

10.1016/0022-0248(91)91103-H

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

Si(m)Ge(n) strained monolayer superlattices (SMSs) have been fabricated by molecular beam epitaxy (MBE) and characterized using photoluminescence (PL) for optical properties and using Raman scattering and X-ray diffraction to verify their structural integrity. Luminescence features below the Si energy bandgap have been observed and attributed to either dislocations in the buffer layer or to energy band transitions in the SMS. The effect of rapid thermal annealing (RTA) on the superlattice structure and on these transitions is reported and a model is proposed to explain the obtained results.

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页码：897 / 901

页数：5

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