PHOTOLUMINESCENCE STUDIES OF SILICON MOLECULAR-BEAM EPITAXY LAYERS

被引：6

作者：

ROBBINS, DJ ^{[1
]}

KUBIAK, RAA ^{[1
]}

PARKER, EHC ^{[1
]}

机构：

[1] ROYAL SIGNALS & RADAR ESTAB, MALVERN WR14 3PS, WORCS, ENGLAND

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1985年 / 3卷 / 02期

关键词：

D O I：

10.1116/1.583187

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：588 / 591

页数：4

共 11 条

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[3]

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[4]

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[5] ENHANCED STICKING COEFFICIENTS AND IMPROVED PROFILE CONTROL USING BORON AND ANTIMONY AS COEVAPORATED DOPANTS IN SI-MBE [J].

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LEONG, WY ;

PARKER, EHC .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1985, 3 (02) :592-595

[6] ANALYSIS OF THE EXCITON LUMINESCENCE OF SILICON FOR CHARACTERIZATION OF THE CONTENT OF IMPURITIES [J].

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HAMAKAWA, Y .

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[7] ORIGIN OF THE 0.97 EV LUMINESCENCE IN IRRADIATED SILICON [J].

ODONNELL, KP ;

LEE, KM ;

WATKINS, GD .

PHYSICA B & C, 1983, 116 (1-3) :258-263

[8]

ROBBINS D, UNPUB

[9] PHOTO-LUMINESCENCE CHARACTERIZATION OF DEEP DEFECTS IN SILICON [J].

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WEBER, J .

PHYSICA B & C, 1983, 116 (1-3) :195-209

[10]

Skolnick M. S., 1981, Laser and Electron-Beam Solid Interactions and Materials Processing. Proceedings of the Materials Research Society Symposium, P185

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