PURIFICATION AND CHARACTERIZATION OF METALLURGICAL SILICON

被引：21

作者：

CHU, TL

VANDERLEEDEN, GA

YOO, HI

机构：

来源：

关键词：

D O I：

10.1149/1.2131520

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：661 / 665

页数：5

共 17 条

[11]

McCormick J. R., 1975, 11th IEEE Photovoltaic Specialists Conference, P270

[12] ELECTRICAL PROPERTIES OF SILICON CONTAINING ARSENIC AND BORON [J].

MORIN, FJ ;

MAITA, JP .

PHYSICAL REVIEW, 1954, 96 (01) :28-35

[13]

STULL DR, 1971, NBS37 NSRDS

[14]

THEUERER HC, 1956, J MET, V6, P1316

[15] SOLID SOLUBILITIES OF IMPURITY ELEMENTS IN GERMANIUM AND SILICON [J].

TRUMBORE, FA .

BELL SYSTEM TECHNICAL JOURNAL, 1960, 39 (01) :205-233

[16]

van der Pauw L. J., 1958, PHILIPS RES REP, V1958, P1

[17]

Voos W., 1961, US patent, Patent No. [2,972,521, 2972521]