NET AND TOTAL SHALLOW IMPURITY ANALYSIS OF SILICON BY LOW-TEMPERATURE FOURIER-TRANSFORM INFRARED-SPECTROSCOPY

被引：26

作者：

BABER, SC

机构：

来源：

关键词：

Compendex;

D O I：

10.1016/0040-6090(80)90575-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Semiconducting silicon

引用

页码：201 / 210

页数：10

共 17 条

KOLBESEN, BO .

[12] SPECTROSCOPIC INVESTIGATION OF GROUP-3 ACCEPTOR STATES IN SILICON [J].

ONTON, A ;

FISHER, P ;

RAMDAS, AK .

PHYSICAL REVIEW, 1967, 163 (03) :686-&

[13] IMPURITY LINES OF BORON + PHOSPHORUS IN SILICON [J].

PAJOT, B .

[14]

PANKOVE JI, 1975, OPTICAL PROCESSES SE, P107

[15] ABSORPTION SPECTRA OF IMPURITIES IN SILICON .2. GROUP-V DONORS [J].

PICUS, G ;

BURSTEIN, E ;

HENVIS, B .

[16] ABSORPTION-LINE BROADENING IN BORON-DOPED SILICON [J].

WHITE, JJ .

[17]

1975, ANNUAL BOOK ASTM 43