MOLECULAR-BEAM EPITAXIAL-GROWTH OF SINGLE-CRYSTAL AL FILMS ON GAAS (110)

被引：34

作者：

PRINZ, GA ^{[1
]}

FERRARI, JM ^{[1
]}

GOLDENBERG, M ^{[1
]}

机构：

[1] SACHS FREEMAN ASSOCIATES,BOWIE,MD 20715

来源：

APPLIED PHYSICS LETTERS | 1982年 / 40卷 / 02期

关键词：

D O I：

10.1063/1.93020

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：155 / 157

页数：3

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[2] Cho A. Y., 1975, Progress in Solid State Chemistry, V10, P157, DOI 10.1016/0079-6786(75)90005-9
[3] SINGLE-CRYSTAL-ALUMINUM SCHOTTKY-BARRIER DIODES PREPARED BY MOLECULAR-BEAM EPITAXY (MBE) ON GAAS
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[4] STRUCTURAL ENERGIES OF AL DEPOSITED ON THE GAAS(110) SURFACE
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[5] MOLECULAR-BEAM EPITAXY OF ALTERNATING METAL-SEMICONDUCTOR FILMS
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